1995-1996，中国科学院北京科学仪器研制中心研究实习员；1997-2001，中国科学院物理研究所助理研究员；2001-2008，中国科学院物理研究所副研究员；2002年德国明斯特大学访问学者。2003－2004，美国伊利诺依大学厄巴纳-香槟分校(UIUC)博士后。2008-至目前，中国科学院物理研究所研究员、博士生导师。

低维纳米体系的可控制备与纳米加工及器件物性研究。

1. 李娜、张广宇、时东霞、杨蓉，一种可直接在二维材料表面生长氧化铝的原子层沉积方法，中国发明专利，ZL201910161220.5
2. 张广宇、卢晓波、时东霞、杨蓉、汤建，用于制备二维材料范德华异质结的真空转移设备，中国发明专利，ZL201710315987.x
3. 张广宇、杨蓉、时东霞、谢贵柏，多功能电感耦合等离子体增强化学气相沉积系统，中国实用新型专利，ZL201720416429.8
4. 张广宇、杨蓉、时东霞、李烁辉、余画，二维材料范德瓦尔斯外延生长与修饰系统，中国实用新型专利，ZL201720018837.8
5. 张广宇、何聪丽、时东霞，电光转换元件及其应用，中国发明专利，ZL201310126470.8
6. 张广宇、时东霞、张菁，金属硫属化物薄膜的制备方法，中国发明专利，ZL201310102517.7；
7. 张广宇、赵静、时东霞，一种基于纳米石墨烯隧穿效应的人造皮肤及其制备方法，中国发明专利，ZL201210574577.4；
8. 张广宇、杨蓉、时东霞，基于分立式纳米石墨烯浮栅的新型低压高性能非易失性存储器，中国发明专利，ZL201210184172.X；
9. 刘冬华、张广宇、时东霞、一种半导体纳米材料器件及其制作方法， 中国发明专利，ZL201110455639.5；

10.张广宇、张连昌、时东霞，一种异质外延生长石墨烯的方法，中国发明专利，ZL201110222191.2；

11.张广宇、时东霞、张连昌，一种在各种基底上直接生长石墨烯的方法，中国发明专利，ZL201010191154.5

12.张广宇、时东霞、史志文、杨蓉、王毅，石墨烯纳机电系统开关器件，中国发明专利，ZL200910091396.4

13.张广宇、时东霞、杨蓉、王毅、张连昌，一种对石墨或石墨烯进行各向异性刻蚀的方法，中国发明专利，ZL200910091395.X；

14.高鸿钧、潘毅、时东霞，一种制备厘米级单层或双层有序单晶石墨层的方法， 中国发明专利，ZL200710178791.7

2008年获国家自然科学二等奖（原子分子操纵、组装及其特性的STM研究，排名第三）

2013年获中科院杰出科技成就奖（功能纳米结构及其器件，集体奖，主要贡献者）。 

中国真空学会常务副秘书长

1. Mengzhou Liao, Paolo Nicolini, Luojun Du, Jiahao Yuan, Shuopei Wang, Hua Yu, Jian Tang, Peng Cheng, Kenji Watanabe, Takashi Taniguchi, Lin Gu, Victor E. P. Claerbout, Andrea Silva, Denis Kramer, Tomas Polcar, Rong Yang, Dongxia Shi, Guangyu Zhang*, UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures.Nature Materials doi.org/10.1038/s41563-021-01058-4
2. Zheng Wei†, Jian Tang†, Xuanyi Li, Zhen Chi, Yu Wang, Qinqin Wang, Bo Han, Na Li, Biying Huang, Jiawei Li, Hua Yu, Jiahao Yuan, Hailong Chen, Jiatao Sun, Lan Chen, Kehui Wu, Peng Gao, Congli He, Wei Yang, Dongxia Shi, Rong Yang*, and Guangyu Zhang*, Wafer‐Scale Oxygen‐Doped MoS2 Monolayer.Small methods 5, 2100091 (2021).
3. Jian Tang†, Congli He†,* Jianshi Tang, Kun Yue, Qingtian Zhang, Yizhou Liu, Qinqin Wang, Shuopei Wang, Na Li, Cheng Shen, Yanchong Zhao, Jieying Liu, Jiahao Yuan, Zheng Wei, Jiawei Li, Kenji Watanabe, Takashi Taniguchi, Dashan Shang, Shouguo Wang, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing.Adv. Funct. Mater. 2011083 (2021).
4. Yanchong Zhao†, Tao Bo†, Luojun Du, Jinpeng Tian, Xiaomei Li, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi*, Sheng Meng, Wei Yang*, and Guangyu Zhang*, Thermally induced band hybridization in bilayer-bilayer MoS2/WS2 heterostructure. Chin. Phys. B 30, 5, 057801 (2021).
5. Cheng Shen, Jianghua Ying, Le Liu, Jianpeng Liu, Na Li, Shuopei Wang, Jian Tang, Yanchong Zhao, Yanbang Chu, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Fanming Qu, Li Lu, Wei Yang*, and Guangyu Zhang*, Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene. Chin. Phys. Lett. 38, 4, 047301 (2021).
6. Yanchong Zhao, Luojun Du*, Wei Yang, Cheng Shen, Jian Tang, Xiaomei Li, Yanbang Chu, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Zhipei Sun, and Guangyu Zhang*, Observation of logarithmic Kohn anomaly in monolayer graphene. Phys. Rev. B102, 165415, (2020).
   1. Jian Tang, Qinqin Wang, Zheng Wei, Cheng Shen, Xiaobo Lu, Shuopei Wang, Yanchong Zhao, Jieying Liu, Na Li, Yanbang Chu, Jinpeng Tian, Fanfan Wu, Wei Yang, Congli He, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, and Guangyu Zhang*, Vertical Integration of 2D Building Blocks for All-2D Electronics. Advanced Electronic Materials.2000550, (2020).
   2. 8.      Na Li†, Qinqin Wang†, Cheng Shen, Zheng Wei, Hua Yu, Jing Zhao, Xiaobo Lu, Guole Wang, Congli He, Li Xie, Jianqi Zhu, Luojun Du, Rong Yang*, Dongxia Shi and Guangyu Zhang*, Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nature Electronics 3, 711 (2020).
   3. Jian Tang†, Zheng Wei†, Qinqin Wang, Yu Wang, Bo Han, Xiaomei Li, Biying Huang, Mengzhou Liao, Jieying Liu, Na Li, Yanchong Zhao, Cheng Shen, Yutuo Guo, Xuedong Bai, Peng Gao, Wei Yang, Lan Chen, Kehui Wu, Rong Yang*, Dongxia Shi, and Guangyu Zhang*, In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics. Small, 2004276, (2020).
   4. Yanbang Chu, Le Liu, Yalong Yuan, Cheng Shen, Rong Yang, Dongxia Shi, Wei Yang* and Guangyu Zhang*, A Review of Experimental Advances in Twisted Graphene Moiré Superlattice. Chin. Phys. B. 29, 12, 128104 (2020).
   5. Qinqin Wang, Na Li, Jian Tang, Jianqi Zhu, Qinghua Zhang, Qi Jia, Ying Lu, Zheng Wei, Hua Yu, Yanchong Zhao, Yutuo Guo, Lin Gu, Gang Sun, Wei Yang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Wafer-scale Highly Oriented Monolayer MoS2 with Large Domain Sizes. Nano Lett. 20, 7193 (2020).
   6. Zheng Wei, Mengzhou Liao, Yutuo Guo, Jian Tang, Yongqing Cai, Hanyang Chen, Qinqin Wang, Qi Jia, Ying Lu, yanchong zhao, Jieying Liu, Yanbang Chu, Hua Yu, Na Li, Jiahao Yuan, Biying Huang, Cheng Shen, R Yang, dongxia shi and Guangyu Zhang*, Scratching Lithography for Wafer-Scale MoS2 Monolayers. 2D Materials 7, 4, 045028 (2020).
   7. Xiaobo Lu†,*, Jian Tang†, John R. Wallbank, Shuopei Wang, Cheng Shen, Shuang Wu, Peng Chen, Wei Yang, Jing Zhang, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Dmitri K. Efetov, Vladimir I. Fal’ko, and Guangyu Zhang*, High-order minibands and interband Landau level reconstruction in graphene moiré superlattices. Phys. Rev. B, 102, 045409, (2020).
   8. Cheng Shen, Yanbang Chu, QuanSheng Wu, Na Li, Shuopei Wang, Yanchong Zhao, Jian Tang, Jieying Liu, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Zi Yang Meng, Dongxia Shi, Oleg V. Yazyev and Guangyu Zhang*, Correlated states in twisted double bilayer graphene. Nature Physics, 16, 520–525(2020).
   9. Mengzhou Liao†, Zheng Wei†, Luojun Du†, Qinqin Wang, Jian Tang, Hua Yu, Fanfan Wu, Jiaojiao Zhao, Xiaozhi Xu, Bo Han, Kaihui Liu, Peng Gao, Tomas Polcar, Zhipei Sun, Dongxia Shi, Rong Yang* and Guangyu Zhang*, Precise control of the interlayer twist angle in large scale MoS2 homostructures. Nature Communications, 11, 2153 (2020).
   10. Jian-Ling Meng†,*, Zheng Wei†, Jian Tang, Yanchong Zhao, QinqinWang, JinpengTian, RongYang, GuangyuZhang and Dongxia Shi*, Employing defected monolayer MoS2 as charge storage materials. Nanotechnology, 31, 235710 (2020).
   11. Congli He†, Jian Tang†, Da-Shan Shang†, Jianshi Tang, Yue Xi, Shuopei Wang, Na Li, Qingtian Zhang, Jikai Lu, Zheng Wei, Qinqin Wang, Cheng Shen, Jiawei Li, Shipeng Shen, Jianxin Shen, Rong Yang, Dongxia shi, Huaqiang Wu, Shouguo Wang, Guangyu Zhang*, Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing. ACS Appl. Mater. Interfaces, 12, 10, 11945–11954 (2020).
   12. Luojun Du, Qian Zhang, Tingting Zhang, Zhiyan Jia, Jing Liang, Gui-Bin Liu, Rong Yang, Dongxia Shi, Jianyong Xiang, Kaihui Liu, Zhipei Sun, Yugui Yao, Qingming Zhang, and Guangyu Zhang*, Robust circular polarization of indirect Q-K transitions in bilayer 3R-WS2. Phys. Rev. B 100, 161404 (2019).
   13. Luojun Du, Jian Tang, Jing Liang, Mengzhou Liao, Zhiyan Jia, Qinghua Zhang, Yanchong Zhao, Rong Yang, Dongxia Shi, Lin Gu, Jianyong Xiang, Kaihui Liu, Zhipei Sun*, and Guangyu Zhang*, Giant Valley Coherence at Room Temperature in 3R WS2 with Broken Inversion Symmetry. Research 6494565 (2019).
   14. Luojun Du†,* Jian Tang†, Yanchong Zhao†, Xiaomei Li, Rong Yang, Xuerong Hu, Xueyin Bai, Xiao Wang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Guoqiang Yu, Xuedong Bai, Tawfique Hasan, Guangyu Zhang*, Zhipei Sun*, Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe3GeTe2. Adv. Funct. Mater. 29, 1904734 (2019).
   15. Xiao Wang†, Jian Tang†, Xiuxin Xia†, Congli He, Junwei Zhang, Yizhou Liu, Caihua Wan, Chi Fang, Chenyang Guo, Wenlong Yang, Yao Guang, Xiaomin Zhang,Hongjun Xu, Jinwu Wei, Mengzhou Liao, Xiaobo Lu, Jiafeng Feng, Xiaoxi Li,Yong Peng, Hongxiang Wei, Rong Yang, Dongxia Shi, Xixiang Zhang, Zheng Han*, Zhidong Zhang, Guangyu Zhang*, Guoqiang Yu*, Xiufeng Han, Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2. Sci. Adv. 5, 8, eaaw8904 (2019).
   16. Peng Chen, Cai Cheng, Cheng Shen, Jing Zhang, Shuang Wu, Xiaobo Lu, Shuopei Wang, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Jiatao Sun, Rong Yang, Dongxia Shi, Kaihui Liu, Sheng Meng and Guangyu Zhang*, Band evolution of two-dimensional transition metal dichalcogenides under electric fields. Appl. Phys. Lett. 115, 083104 (2019).
   17. Luojun Du, Mengzhou Liao, Gui-Bin Liu, Qinqin Wang, Rong Yang, Dongxia Shi, Yugui Yao, Guangyu Zhang*, Strongly distinct electrical response between circular and valley polarization in bilayer transition metal dichalcogenides. Phys. Rev. B 99, 19, 195415 (2019).
   18. Luojun Du†, Yanchong Zhao†, Zhiyan Jia, Mengzhou Liao, Qinqin Wang, Xiangdong Guo, Zhiwen Shi, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Jianyong Xiang, Dongxia Shi, Qing Dai, Zhipei Sun, Guangyu Zhang*, Strong and tunable interlayer coupling of infrared-active phonons to excitons in van der Waals heterostructures. Phys. Rev. B 99, 20, 205410 (2019).
   19. Na Li, Zheng Wei, Jing Zhao, Qinqin Wang, Cheng Shen, Shuopei Wang, Jian Tang, Rong Yang*, Dongxia Shi, Guangyu Zhang*, Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics. Advanced Materials Interfaces 6, 1802055 (2019).
   20. Jianqi Zhu†, Zhi-Chang Wang†, Huijia Dai†, Qinqin Wang, Rong Yang*, Hua Yu, Mengzhou Liao, Jing Zhang, Wei Chen, Zheng Wei, Na Li, Luojun Du, Dongxia Shi, Wenlong Wang, Lixin Zhang*, Ying Jiang* & Guangyu Zhang*, Boundary activated hydrogen evolution reaction on monolayer MoS2. Nature Communications 10, 1348 (2019).
   21. Shuopei Wang, Congli He, Jian Tang, Xiaobo Lu, Cheng Shen, Hua Yu, Luojun Du, Jiafang Li, Rong Yang, Dongxia Shi and Guangyu Zhang*, New Floating Gate Memory with Excellent Retention Characteristics. Advanced Electronic Materials 5, 1800726 (2019).
   22. Shuopei Wang, Congli He*, Jian Tang, Rong Yang, Dongxia Shi, and Guangyu Zhang*, Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor. Chin. Phys. B 28, 1, 017304, (2019).
   23. Mengzhou Liao, Luojun Du, Tingting Zhang, Lin Gu, Yugui Yao, Rong Yang, Dongxia Shi*, and Guangyu Zhang*, Pressure-mediated contact quality improvement between monolayer MoS2 and graphite. Chin. Phys. B 28, 1, 017301 (2019).
   24. Luojun Du, Yuan Huang, Yimeng Wang, Qinqin Wang, Rong Yang*, Jian Tang, Mengzhou Liao, Dongxia Shi, Youguo Shi, Xingjiang Zhou, Qingming Zhang* and Guangyu Zhang*, 2D proximate quantum spin liquid state in atomic-thin α-RuCl3. 2D Materials 6, 015014 (2019).